THE BEST SIDE OF GERMANIUM

≤ 0.fifteen) is epitaxially developed over a SOI substrate. A thinner layer of Si is developed on this SiGe layer, and afterwards the structure is cycled by means of oxidizing and annealing phases. Mainly because of the preferential oxidation of Si more than Ge [sixty eight], the initial Si1–This Web-site utilizes cookies to provide many of our